Charge transport in disordered semiconducting polymers driven by nuclear tunneling

Article

关键词: EXTERNAL ELECTRIC-FIELD;    HIGH CARRIER DENSITY;    ORGANIC SEMICONDUCTORS;    TEMPERATURE;    PREDICTION;    PARAMETERS;    SIMULATION;    MOBILITY;    SYSTEM;    MODEL;   

DOI  :  10.1103/PhysRevB.93.140206

来源: SCIE

【 摘 要 】

The current density-voltage (J-V) characteristics of hole-only diodes based on poly(2-methoxy, 5-(2' ethylhexyloxy)-p-phenylene vinylene) (MEH-PPV) were measured at a wide temperature and field range. At high electric fields the temperature dependence of the transport vanishes, and all J-V sweeps converge to a power law. Nuclear tunneling theory predicts a power law at high fields that scales with the Kondo parameter. To model the J -V characteristics we have performed master-equation calculations to determine the dependence of charge carrier mobility on electric field, charge carrier density, temperature, and Kondo parameter, using nuclear tunneling transfer rates. We demonstrate that nuclear tunneling, unlike other semiclassical models, provides a consistent description of the charge transport for a large bias, temperature, and carrier density range.

【 授权许可】

Free