Structure and dynamics of pentacene on SiO2: From monolayer to bulk structure

Article

关键词: X-RAY-DIFFRACTION;    THIN-FILMS;    CRYSTAL-STRUCTURE;    ORGANIC SEMICONDUCTORS;    EVAPORATED PENTACENE;    GROWTH-MODELS;    POLYMORPHS;    SUBSTRATE;    IDENTIFICATION;    TEMPERATURE;   

DOI  :  10.1103/PhysRevB.85.195308

来源: SCIE

【 摘 要 】

We have used confocal micro Raman spectroscopy, atomic force microscopy (AFM), and x-ray diffraction (XRD) to investigate pentacene films obtained by vacuum deposition on SiO2 substrates. These methods allow us to follow the evolution of lattice structure, vibrational dynamics, and crystal morphology during the growth from monolayer, to TF, and, finally, to bulk crystal. The Raman measurements, supported by the AFM and XRD data, indicate that the film morphology depends on the deposition rate. High deposition rates yield two-dimensional nucleation and quasi-layer-by-layer growth of the T-F form only. Low rates yield three-dimensional nucleation and growth, with phase mixing occurring in sufficiently thick films, where the T-F form is accompanied by the high-temperature bulk phase. Our general findings are consistent with those of previous work. However, the Raman measurements, supported by lattice dynamics calculations, provide additional insight into the nature of the TFs, showing that their characteristic spectra originate from a loss of dynamical correlation between adjacent layers.

【 授权许可】

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