Vacancy defects in epitaxial thin film CuGaSe2 and CuInSe2

Article

关键词: POSITRON-ANNIHILATION;    DISTRIBUTIONS;    GAAS;   

DOI  :  10.1103/PhysRevB.86.064102

来源: SCIE

【 摘 要 】

Epitaxial thin film CuGaSe2 and CuInSe2 samples grown on GaAs substrates with varying [Cu]/[Ga,In] ratios were studied using positron annihilation Doppler-broadening spectroscopy and were compared to bulk crystals. We find both Cu monovacancies and Cu-Se divacancies in CuInSe2, whereas, in CuGaSe2, the only observed vacancy defect is the Cu-Se divacancy.

【 授权许可】

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