Valence-band structure of ferromagnetic semiconductor (In,Ga,Mn)As

Article

关键词: DILUTED MAGNETIC SEMICONDUCTORS;    III-V SEMICONDUCTORS;    CURIE-TEMPERATURE;    GAAS;    HETEROSTRUCTURES;    MANIPULATION;    (INGAMN)AS;    (GAMN)AS;    GROWTH;    FIELD;   

DOI  :  10.1103/PhysRevB.86.094418

来源: SCIE

【 摘 要 】

To clarify the whole picture of the valence-band structures of prototype ferromagnetic semiconductors (III,Mn) As (III: In and Ga), we perform systematic experiments of the resonant tunneling spectroscopy on [(In0.53Ga0.47)(1-x)Mn-x]As (x = 0.06-0.15) and In0.87Mn0.13As grown on AlAs/In0.53Ga0.47As:Be/p(+)InP(001). We show that the valence band of [(In0.53Ga0.47)(1-x)Mn-x] As almost remains unchanged from that of the host semiconductor (In0.53Ga0.47) As, that the Fermi level exists in the band gap, and that the p-d exchange splitting in the valence band is negligibly small in (In, Ga, Mn) As. In the In0.87Mn0.13As sample, although the resonant peaks are very weak due to the large strain induced by the lattice mismatch between InP and InMnAs, our results also indicate that the Fermi level exists in the band gap and that the p-d exchange splitting in the valence band is negligibly small. These results are quite similar to those of GaMnAs obtained by the same method, meaning that there are no holes in the valence band, and that the impurity-band holes dominate the transport and magnetism both in the [(In0.53Ga0.47)(1-x)Mn-x] As and In0.87Mn0.13As films. This band-structure picture of (III, Mn) As is remarkably different from that of II-VI-based diluted magnetic semiconductors.

【 授权许可】

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