Interaction between magnetic moments and itinerant carriers in d(0) ferromagnetic SiC

Article

关键词: ELECTRON FERROMAGNETISM;    POSITRON;    SEMICONDUCTORS;    IMPLANTATION;    GRAPHENE;    DEFECTS;   

DOI  :  10.1103/PhysRevB.95.195309

来源: SCIE

【 摘 要 】

Elucidating the interaction between magnetic moments and itinerant carriers is an important step to spintronic applications. Here, we investigate magnetic and transport properties in d(0) ferromagnetic SiC single crystals prepared by postimplantation pulsed laser annealing. Magnetic moments are contributed by the p states of carbon atoms, but their magnetic circular dichroism is different from that in semi-insulating SiC samples. The anomalous Hall effect and negative magnetoresistance indicate the influence of d(0) spin order on free carriers. The ferromagnetism is relatively weak in N-implanted SiC compared with that in Al-implanted SiC after annealing. The results suggest that d(0) magnetic moments and itinerant carriers can interact with each other, which will facilitate the development of SiC spintronic devices with d(0) ferromagnetism.

【 授权许可】

Free