Incorporation of Mn in AlxGa1-xN probed by x-ray absorption and emission spectroscopy, high-resolution microscopy, x-ray diffraction, and first-principles calculations

Article

关键词: FINE-STRUCTURE;    ALGAN FILMS;    K-EDGE;    F-TEST;    GAN;    SPECTRA;    SEMICONDUCTORS;    IMPLANTATION;    ELLIPSOMETRY;    PARAMETERS;   

DOI  :  10.1103/PhysRevB.92.115308

来源: SCIE

【 摘 要 】

Synchrotron radiation x-ray absorption and emission spectroscopy techniques, complemented by high-resolution transmission electron microscopy methods and density functional theory calculations, are employed to investigate the effect of Mn in AlxGa1-xN:Mn samples with an Al content up to 100%. The atomic and electronic structure of Mn is established together with its local environment and valence state. A dilute alloy without precipitation is obtained for AlxGa1-xN:Mn with Al concentrations up to 82%, and the surfactant role of Mn in the epitaxial process is confirmed.

【 授权许可】

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