Calculation of positron annihilation characteristics of six main defects in 6H-SiC and the possibility to distinguish them experimentally

Article

关键词: TOTAL-ENERGY CALCULATIONS;    VACANCY-TYPE DEFECTS;    ROOM-TEMPERATURE;    SILICON-CARBIDE;    AB-INITIO;    ANNEALING BEHAVIOR;    ELECTRON;    SEMICONDUCTORS;    DISTRIBUTIONS;    IMPLANTATION;   

DOI  :  10.1103/PhysRevB.94.014103

来源: SCIE

【 摘 要 】

We have determined positron annihilation characteristics (lifetime and Doppler broadening) in six basic vacancy-type defects of 6H-SiC and two nitrogen-vacancy complexes using ab initio calculations. The positron characteristics obtained allow us to point out which positron technique in the most adapted to identify a particular defect. They show that the coincidence Doppler broadening technique is the most relevant for observing the silicon vacancy-nitrogen complexes, VSiNC, and carbon vacancy-carbon antisite ones, VCCSi. For the other studied defects, the calculated positron characteristics are found to be too close for the defects to be easily distinguished using a single positron annihilation technique. Then it is required to use complementary techniques, positron annihilation based or other.

【 授权许可】

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