Photophysics of GaN single-photon emitters in the visible spectral range

Article

关键词: HEXAGONAL BORON-NITRIDE;    ROOM-TEMPERATURE;    SOLID-STATE;    QUANTUM-DOT;    DIAMOND NANOPHOTONICS;    SILICON-CARBIDE;    EMISSION;    DEFECTS;    CENTERS;    MOLECULES;   

DOI  :  10.1103/PhysRevB.97.165202

来源: SCIE

【 摘 要 】

In this work, we present a detailed photophysical analysis of recently discovered, optically stable single-photon emitters (SPEs) in gallium nitride (GaN). Temperature-resolved photoluminescence measurements reveal that the emission lines at 4 K are three orders of magnitude broader than the transform-limited width expected from excited-state lifetime measurements. The broadening is ascribed to ultrafast spectral diffusion. The photophysical study on several emitters at room temperature (RT) reveals an average brightness of (427 +/- 215) kCounts/s. Finally, polarization measurements from 14 emitters are used to determine visibility as well as dipole orientation of defect systems within the GaN crystal. Our results underpin some of the fundamental properties of SPEs in GaN both at cryogenic and RT, and define the benchmark for future work in GaN-based single-photon technologies.

【 授权许可】

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