Electrical activity of carbon-hydrogen centers in Si

Article

关键词: STRESS-INDUCED ALIGNMENT;    CRYSTALLINE SILICON;    DEFECTS;    SEMICONDUCTORS;    COMPLEX;    OXYGEN;    STATE;   

DOI  :  10.1103/PhysRevB.66.235205

来源: SCIE

【 摘 要 】

The electrical activity of C-s-H defects in Si has been investigated in a combined modeling and experimental study. High-resolution Laplace capacitance spectroscopy with the uniaxial stress technique has been used to measure the stress-energy tensor and the results are compared with theoretical modeling. At low temperatures, implanted H is trapped as a negative-U center with a donor level in the upper half of the gap. However, at higher temperatures, H migrates closer to the carbon impurity and the donor level falls, crossing the gap. At the same time, an acceptor level is introduced into the upper gap making the defect a positive-U center.

【 授权许可】

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