Tunable ferromagnetism in Ni0.97-yMnyO thin films with hole doping and their electronic structures

Article

关键词: DILUTED MAGNETIC SEMICONDUCTORS;    ROOM-TEMPERATURE;    DOPED ZNO;    BAND-GAP;    SPINTRONICS;    OXIDES;    DESIGN;    NIO;   

DOI  :  10.1103/PhysRevB.83.193105

来源: SCIE

【 摘 要 】

We report p-type LiyNi0.97-yMn0.03O thin films (LNMO) via a simple solution method on silicon substrates. Magnetization measurements reveal that room-temperature tunable ferromagnetism can be observed in these LNMO thin films. The Mn L-2,L-3 x-ray absorption and core-level photoelectron spectra indicate that Mn consists of the Mn2+ and Mn3+ components. The O K-edge x-ray absorption spectroscopy reveals that the majority of holes introduced by the Li doping have mainly O 2p character, and the hole concentration can be enhanced by almost two orders of magnitude by the Li doping, which can tune magnetism and T-C. This ferromagnetic behavior in these LNMO thin films may be ascribed to the effective carrier-induced ferromagnetism (p-d exchange interaction through the O 2p band).

【 授权许可】

Free