Search for alternative magnetic tunnel junctions based on all-Heusler stacks

Article

关键词: ROOM-TEMPERATURE;    ELECTRONIC-PROPERTIES;    OPTICAL-PROPERTIES;    BAND-GAP;    MAGNETORESISTANCE;    FABRICATION;    CO2FESI;   

DOI  :  10.1103/PhysRevB.98.054425

来源: SCIE

【 摘 要 】

By imposing the constraints of structural compatibility, stability, and a large tunneling magneto-resistance, we have identified the Fe3Al/BiF3/Fe3Al stack as a possible alternative to the well-established FeCoB/MgO/FeCoB in the search for a novel materials platform for high-performance magnetic tunnel junctions. Various geometries of the Fe3Al/BiF3/Fe3Al structure have been analyzed, demonstrating that a barrier of less than 2 nm yields a tunneling magneto-resistance in excess of 25 000% at low bias, without the need for the electrodes to be half-metallic. Importantly, the presence of a significant spin gap in Fe3Al for states with Delta(1) symmetry along the stack direction makes the TMR very resilient to high voltages.

【 授权许可】

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