Microscopic mechanism of the noncrystalline anisotropic magnetoresistance in (Ga,Mn)As

Article

关键词: SEMICONDUCTORS;    ALLOYS;    RESISTIVITY;    ELECTRONS;    METALS;   

DOI  :  10.1103/PhysRevB.80.165204

来源: SCIE

【 摘 要 】

Starting with a microscopic model based on the Kohn-Luttinger Hamiltonian and kinetic p-d exchange combined with Boltzmann formula for conductivity we identify the scattering from magnetic Mn combined with the strong spin-orbit interaction of the GaAs valence band as the dominant mechanism of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. This fact allows to construct a simple analytical model of the AMR consisting of two heavy-hole bands whose charge carriers are scattered on the impurity potential of the Mn atoms. The model predicts the correct sign of the AMR (resistivity parallel to magnetization is smaller than perpendicular to magnetization) and identifies its origin arising from the destructive interference between electric and magnetic part of the scattering potential of magnetic ionized Mn acceptors when the carriers move parallel to the magnetization.

【 授权许可】

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