Quantum Hall effect in the presence of an antidot potential | |
Article | |
关键词: RESISTANCE FLUCTUATIONS; EDGE STATES; CONDUCTORS; TRANSPORT; | |
DOI : 10.1103/PhysRevB.52.16784 | |
来源: SCIE |
【 摘 要 】
We have computed the Hall resistance of a four-probe quantum dot with an artificial impurity confined inside. As the size of the impurity is increased, transport behavior changes from the usual quantum Hall regime to a regime dominated by strong Aharonov-Bohm (AB) oscillations. We observe directly the formation and coupling of the edge states and their effects on the Hall resistance by varying a magnetic field. For a range of the impurity size, transport enters a crossover regime where quantum Hall and AB effects compete, and a peculiar symmetry between various transmission coefficients leads to a Hall plateau before the quantum Hall regime is reached. This symmetry can be explained based on a topological equivalence of the dominating transmission patterns when well-defined edge states are formed.
【 授权许可】
Free