Quantum Hall effect in the presence of an antidot potential

Article

关键词: RESISTANCE FLUCTUATIONS;    EDGE STATES;    CONDUCTORS;    TRANSPORT;   

DOI  :  10.1103/PhysRevB.52.16784

来源: SCIE

【 摘 要 】

We have computed the Hall resistance of a four-probe quantum dot with an artificial impurity confined inside. As the size of the impurity is increased, transport behavior changes from the usual quantum Hall regime to a regime dominated by strong Aharonov-Bohm (AB) oscillations. We observe directly the formation and coupling of the edge states and their effects on the Hall resistance by varying a magnetic field. For a range of the impurity size, transport enters a crossover regime where quantum Hall and AB effects compete, and a peculiar symmetry between various transmission coefficients leads to a Hall plateau before the quantum Hall regime is reached. This symmetry can be explained based on a topological equivalence of the dominating transmission patterns when well-defined edge states are formed.

【 授权许可】

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