In-plane magnetoconductivity of Si MOSFETs: A quantitative comparison of theory and experiment

Article

关键词: METAL-INSULATOR-TRANSITION;    ELECTRON-SYSTEM;    B=0;    CONDUCTIVITY;    BEHAVIOR;    PHASE;   

DOI  :  10.1103/PhysRevB.67.113310

来源: SCIE

【 摘 要 】

For densities above n=1.6x10(11) cm(-2) in the strongly interacting system of electrons in two-dimensional silicon inversion layers, excellent agreement between experiment and the theory of Zala, Narozhny, and Aleiner is obtained for the response of the conductivity to a magnetic field applied parallel to the plane of the electrons. The parameters deduced from fits to the magnetoconductance do not provide quantitative agreement with the observed zero-field temperature dependence. We attribute this to the neglect in the theory of additional scattering terms, which affect the temperature dependence more strongly than the field dependence.

【 授权许可】

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