Dipole trap model for the metal-insulator transition in gated silicon-inversion layers

Article

关键词: TEMPERATURE-DEPENDENCE;    B=0;    MOBILITY;    BEHAVIOR;    CONDUCTIVITY;    LOCALIZATION;    SYSTEM;   

DOI  :  10.1103/PhysRevB.82.205310

来源: SCIE

【 摘 要 】

In order to investigate the metal-insulator transition in high-mobility Si-metal-oxide-semiconductor structures, we have precised and further developed the dipole trap model as originally proposed by Altshuler and Maslov [Phys. Rev. Lett. 82, 145 (1999)]. Our additional numerical treatment enables us to drop several approximations and to introduce a limited spatial depth of the trap states inside the oxide as well as to include a distribution of trap energies. Depending on the type and width of distribution, the metallic state appears more or less pronounced as observed in experiments on samples with different quality.

【 授权许可】

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