Ballistic transport and boundary scattering in InSb/In1-xAlxSb mesoscopic devices

Article

关键词: QUANTUM WIRES;    MAGNETORESISTANCE;    ANOMALIES;    CHANNELS;    COLLIMATION;    RESISTANCE;    INAS/ALSB;    INSB;   

DOI  :  10.1103/PhysRevB.83.075304

来源: SCIE

【 摘 要 】

We describe the influence of hard-wall confinement and lateral dimension on the low-temperature transport properties of long diffusive channels and ballistic crosses fabricated in an InSb/In1-xAlxSb heterostructure. Partially diffuse boundary scattering is found to play a crucial role in the electron dynamics of ballistic crosses and substantially enhance the negative bend resistance. Experimental observations are supported by simulations using a classical billiard ball model for which good agreement is found when diffuse boundary scattering is included.

【 授权许可】

Free