Magnetotransport properties of InMnSb magnetic semiconductor thin films

Article

关键词: MAGNETORESISTANCE;    ALLOYS;    SPINTRONICS;    RESISTANCE;    SCATTERING;    ANOMALIES;   

DOI  :  10.1103/PhysRevB.82.205207

来源: SCIE

【 摘 要 】

We report on the magnetotransport properties of epitaxial thin films of In1-xMnxSb dilute magnetic semiconductor grown by metal-organic vapor-phase epitaxy. At temperatures below 10 K, a negative magnetoresistance dominates the magnetotransport that is attributed to spin-dependent scattering by localized magnetic moments. Above 10 K, the magnetoresistance is positive and is well described by a two-band model consisting of spin-split hybridized p-d subbands with different conductivities. Hall effect measurements show an anomalous behavior that persists up to room temperature, providing an indication of ferromagnetic order. In addition, magnetization measurements reveal distinct hysteresis loops at room temperature which confirms the ferromagnetism of the films.

【 授权许可】

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