Charge and Spin Transport in Dilute Magnetic Semiconductors

Ullrich, Carsten A.

关键词: ABSORPTION;    APPROXIMATIONS;    CARRIER DENSITY;    CURIE POINT;    FUNCTIONALS;    HALL EFFECT;    IMPURITIES;    MAGNETIC SEMICONDUCTORS;    MAGNETORESISTANCE;    PHYSICS;    PLASMONS;    PROBES;    RELAXATION TIME;    SPIN;    TRANSPORT Spintronics;    dilute magnetic semiconductors;    spin transport;    spin-density excitations;    density-functional theory;   

DOI  :  10.2172/960296
RP-ID  :  DOE/ER/46151-1 Final Report
PID  :  OSTI ID: 960296
Others  :  TRN: US1100204

学科分类：凝聚态物理

美国|英语

来源: SciTech Connect

【 摘 要 】

This proposal to the DOE outlines a three-year plan of research in theoretical and computational condensed-matter physics, with the aim of developing a microscopic theory for charge and spin dynamics in disordered materials with magnetic impurities. Important representatives of this class of materials are the dilute magnetic semiconductors (DMS), which have attracted great attention as a promising basis for spintronics devices. There is an intense experimental effort underway to study the transport properties of ferromagnetic DMS such as (Ga,Mn)As, and a number of interesting features have emerged: negative magnetoresistance, anomalous Hall effect, non-Drude dynamical conductivity, and resistivity maxima at the Curie temperature. Available theories have been able to account for some of these features, but at present we are still far away from a systematic microscopic understanding of transport in DMS. We propose to address this challenge by developing a theory of charge and spin dynamics based on a combination of the memory-function formalism and time-dependent density functional theory. This approach will be capable of dealing with two important issues: (a) the strong degree of correlated disorder in DMS, close to the localization transition (which invalidates the usual relaxation-time approximation to the Boltzmann equation), (b) the essentially unknown role of dynamical many-body effects such as spin Coulomb drag. We will calculate static and dynamical conductivities in DMS as functions of magnetic order and carrier density, which will advance our understanding of recent transport and infrared absorption measurements. Furthermore, we will study collective plasmon excitations in DMS (3D, 2D and quantum wells), whose linewidths could constitute a new experimental probe of the correlation of disorder, many-body effects and charge and spin dynamics in these materials.