Polarization fluctuation dominated electrical transport processes of polymer-based ferroelectric field effect transistors

Article

关键词: CARRIER DENSITY;    TEMPERATURE-DEPENDENCE;    DEPOLARIZATION-FIELD;    CHARGE-TRANSPORT;    MOLECULAR-WEIGHT;    PHASE-TRANSITION;    GATE DIELECTRICS;    THIN-FILMS;    ON VOLTAGE;    MOBILITY;   

DOI  :  10.1103/PhysRevB.85.115311

来源: SCIE

【 摘 要 】

Ferroelectric field effect transistors (FE-FETs) consisting of tunable dielectric layers are utilized to investigate interfacial transport processes. Large changes in the dielectric constant as a function of temperature are observed in FE-FETs in conjunction with the ferroelectric to paraelectric transition. The devices offer a test bed to evaluate specific effects of polarization on the electrical processes. FE-FETs have dominant contributions from polarization fluctuation rather than static dipolar disorder prevalent in high k paraelectric dielectric-based FETs. Additionally, photo-excitation measurements in the depletion mode reveal clear features in the FET response at different temperatures, indicative of different transport regimes.

【 授权许可】

Free