Electrical spin injection and accumulation at room temperature in an all-metal mesoscopic spin valve

Article

关键词: GIANT MAGNETORESISTANCE;    DIFFUSION LENGTH;    MAGNETIC MULTILAYERS;    TRANSPORT;    SEMICONDUCTOR;    PERMALLOY;    CHARGE;    SWITCH;   

DOI  :  10.1038/35066533

来源: SCIE

【 摘 要 】

Finding a means to generate, control and use spin-polarized currents represents an important challenge for spin-based electronics(1-3), or 'spintronics'. Spin currents and the associated phenomenon of spin accumulation can be realized by driving a current from a ferromagnetic electrode into a non-magnetic metal or semiconductor. This was first demonstrated over 15 years ago in a spin injection experiment(4) on a single crystal aluminium bar at temperatures below 77 K. Recent experiments(5-8) have demonstrated successful optical detection of spin injection in semiconductors, using either optical injection by circularly polarized light or electrical injection from a magnetic semiconductor. However, it has not been possible to achieve fully electrical spin injection and detection at room temperature. Here we report room-temperature electrical injection and detection of spin currents and observe spin accumulation in an all-metal lateral mesoscopic spin valve, where ferromagnetic electrodes are used to drive a spin-polarized current into crossed copper strips. We anticipate that larger signals should be obtainable by optimizing the choice of materials and device geometry.

【 授权许可】

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