Surface photovoltage measurements and finite element modeling of SAW devices.

Donnelly, Christine

关键词: ACOUSTICS;    DIFFUSION LENGTH;    IMPEDANCE;    RECOMBINATION;    RESONATORS;    SANDIA NATIONAL LABORATORIES;    SILICON;    SIMULATION;   

DOI  :  10.2172/1038204
RP-ID  :  SAND2012-1292
PID  :  OSTI ID: 1038204
Others  :  TRN: US201208%%576

学科分类：材料科学（综合）

美国|英语

来源: SciTech Connect

【 摘 要 】

Over the course of a Summer 2011 internship with the MEMS department of Sandia National Laboratories, work was completed on two major projects. The first and main project of the summer involved taking surface photovoltage measurements for silicon samples, and using these measurements to determine surface recombination velocities and minority carrier diffusion lengths of the materials. The SPV method was used to fill gaps in the knowledge of material parameters that had not been determined successfully by other characterization methods. The second project involved creating a 2D finite element model of a surface acoustic wave device. A basic form of the model with the expected impedance response curve was completed, and the model is ready to be further developed for analysis of MEMS photonic resonator devices.