Measuring radiation damage dynamics by pulsed ion beam irradiation. 2015 Annual Progress Report for DOE/NE/NEET

Kucheyev, S. O.¹ 

[1] Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

关键词: ION BEAMS;    SILICON CARBIDES;    PROGRESS REPORT;    PULSES;    DIFFUSION LENGTH;    PHYSICAL RADIATION EFFECTS;    INTERACTIONS;    IRRADIATION;    TEMPERATURE DEPENDENCE;    EVALUATION;   

DOI  :  10.2172/1245700
RP-ID  :  LLNL-TR--685149
PID  :  OSTI ID: 1245700
Others  :  TRN: US1601249

学科分类：材料科学（综合）

美国|英语

来源: SciTech Connect

【 摘 要 】

The major goal of this project is to develop and demonstrate a novel experimental approach to access the dynamic regime of radiation damage formation processes in nuclear materials. In particular, the project exploits a pulsed-ion-beam method in order to gain insight into defect interaction dynamics by measuring effective defect interaction time constants and defect diffusion lengths. For Year 2, this project had the following two major milestones: (i) measurement of the temperature dependence of defect dynamics in SiC and (ii) the evaluation of the robustness of the pulsed beam method from studies of the defect generation rate. As we describe below, both of these milestones have been met.