Improved Subthreshold Characteristics by Back-Gate Coupling on Ferroelectric ETSOI FETs

Nanoscale Research Letters

Research

Zhenhua Wu¹  Huaxiang Yin²  Jing Xu²  Yudong Li²  Qingzhu Zhang²  Bo Tang²  Jun Luo²  Zhaohao Zhang²  Junjie Li²  Wenwu Wang²  Jinjuan Xiang² 

[1] Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, CAS, Beijing, China;Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, CAS, Beijing, China;Changcheng Institute of Metrology & Measurement, Beijing, China;School of Integrated Circuits of University of Chinese Academy of Sciences, 100049, Beijing, China;

关键词: HfZrO;    ETSOI;    Back gate;    Subthreshold swing;    Domain switching;   

DOI  :  10.1186/s11671-022-03767-4

 received in 2022-03-13, accepted in 2022-12-07,  发布年份 2022

来源: Springer

【 摘 要 】

In this work, extremely thin silicon-on-insulator field effective transistors (ETSOI FETs) are fabricated with an ultra-thin 3 nm ferroelectric (FE) hafnium zirconium oxides (Hf0.5Zr0.5O2) layer. Furthermore, the subthreshold characteristics of the devices with double gate modulation are investigated extensively. Contributing to the advantages of the back-gate voltage coupling effects, the minimum subthreshold swing (SS) value of a 40 nm ETSOI device could be adjusted from the initial 80.8–50 mV/dec, which shows ultra-steep SS characteristics. To illustrate this electrical character, a simple analytical model based on the transient Miller model is demonstrated. This work shows the feasibility of FE ETSOI FET for ultra-low-power applications with dynamic threshold adjustment.

【 授权许可】

CC BY   
© The Author(s) 2022

【 图 表 】

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