A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor

Nanoscale Research Letters

Jong-Ho Lee¹  Meile Wu²  Xiaoshi Jin²  Yicheng Wang²  Xi Liu²  Kailu Ma² 

[1] School of EECS Engineering and ISRC (Inter-University Semiconductor Research Center), Seoul National University, Shinlim-Dong, Kwanak-Gu, 151-742, Seoul, Korea;School of Information Science and Engineering, Shenyang University of Technology, 110870, Shenyang, China;

关键词: Tunnel field effect transistor;    CMOS;    Bidirectional switch;    Subthreshold swing;    Nanoscale;   

DOI  :  10.1186/s11671-021-03561-8

来源: Springer

【 摘 要 】

A bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated circuits compared to the conventional asymmetrical TFET. The effects of the structural parameters, e.g., the doping concentrations of the N+ region and P+ region, length of the N+ region and length of the intrinsic region, on the device performances, e.g., the transfer characteristics, Ion–Ioff ratio and subthreshold swing, and the internal mechanism are discussed and explained in detail.

【 授权许可】

CC BY