学位论文详细信息
Characterization of High-k gate dielectrics based on HfO2 and TiO2 for CMOS Application | |
HAFNIUM OXIDE;TITANIUM OXIDE;HAFNIUM SILICON OXYNITRIDE;CMOS;HIGH K;GATE DIELECTRICS | |
Lee, Sanghyun ; GERRY LUCOVSKY, Committee Co-Chair,CALTON OSBURN, Committee Co-Chair,ROBERT M. KOLBAS, Committee Member,DOUG BARLAGE, Committee Member,Lee, Sanghyun ; GERRY LUCOVSKY ; Committee Co-Chair ; CALTON OSBURN ; Committee Co-Chair ; ROBERT M. KOLBAS ; Committee Member ; DOUG BARLAGE ; Committee Member | |
University:North Carolina State University | |
关键词: HAFNIUM OXIDE; TITANIUM OXIDE; HAFNIUM SILICON OXYNITRIDE; CMOS; HIGH K; GATE DIELECTRICS; | |
Others : https://repository.lib.ncsu.edu/bitstream/handle/1840.16/5251/etd.pdf?sequence=1&isAllowed=y | |
美国|英语 | |
来源: null | |
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