Characterization of High-k gate dielectrics based on HfO2 and TiO2 for CMOS Application

HAFNIUM OXIDE;TITANIUM OXIDE;HAFNIUM SILICON OXYNITRIDE;CMOS;HIGH K;GATE DIELECTRICS

Lee, Sanghyun ; GERRY LUCOVSKY, Committee Co-Chair,CALTON OSBURN, Committee Co-Chair,ROBERT M. KOLBAS, Committee Member,DOUG BARLAGE, Committee Member,Lee, Sanghyun ; GERRY LUCOVSKY ; Committee Co-Chair ; CALTON OSBURN ; Committee Co-Chair ; ROBERT M. KOLBAS ; Committee Member ; DOUG BARLAGE ; Committee Member

University:North Carolina State University

关键词: HAFNIUM OXIDE;    TITANIUM OXIDE;    HAFNIUM SILICON OXYNITRIDE;    CMOS;    HIGH K;    GATE DIELECTRICS;   

Others  :  https://repository.lib.ncsu.edu/bitstream/handle/1840.16/5251/etd.pdf?sequence=1&isAllowed=y

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