Impact of Al content on InAs/AlSb/Al(x)Ga(1−x)Sb tunnelling diode

The Journal of Engineering

Edward Yi Chang¹  Chingyi Hsu²  Chenming Hu²  Yuping Zeng³ 

[1] National Chiao Tung University;University of California;University of Delaware;

关键词: tunnel diodes;    semiconductor doping;    indium compounds;    aluminium compounds;    semiconductor doping levels;    diode barrier thicknesses;    negative differential region;    quantised layer;    epitaxial layers;    peak-to-valley ratio;    tunnelling diode;    InAs-AlSb-Al(x)Ga(1−x)Sb;   

DOI  :  10.1049/joe.2017.0248

来源: DOAJ

【 摘 要 】

A method to engineer the peak-to-valley ratio (PVR) by design of the epitaxial layers is presented. The impact of Al content on PVR of InAs/AlSb/Al(x)Ga(1−x)Sb tunnelling diode is studied. A simplified analytical model is used to explain the PVRs dependence on Al content. It was found that PVR reaches its maximum when Al content x is zero with a quantised InAs layer. The peak positions appeared in the negative differential region are effectively controlled by the applied gate bias. A PVR ratio as high as 7.1 was achieved, which is beneficial for a wide range of circuit applications. Adjusting Al content provides a new way to engineer the PVR as opposed to the conventional way of being optimised by varying barrier thicknesses or doping levels.

【 授权许可】

Unknown