Performance investigation of a semi-junctionless type II heterojunction tunnel field effect transistor in nanoscale regime

Micro & nano letters

article

Zahra Ahangari¹ 

[1] Young Researchers and Elite Club, Yadegar-e-Imam Khomeini (RAH) Shahre-Rey Branch, Islamic Azad University

关键词: gallium arsenide;    tunnel transistors;    semiconductor heterojunctions;    indium compounds;    III-V semiconductors;    semiconductor device models;    semiconductor doping;    field effect transistors;    doping profiles;    GaAs0.1Sb0.9-InAs;    semijunctionless tunnel field effect transistor;    n-channel SJTFET;    on-state current manifests;    gate workfunction;    source–channel doping density;    off-state current;    source–channel doping concentration;    drain–channel junction;    tunnel barrier;    short channel effects;    doping profile;    semijunctionless type II heterojunction;    p+-p+-n structure;    gate oxide thickness;    n-p+ drain–channel junction;   

DOI  :  10.1049/mnl.2017.0877

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

Dandruff and seborrheic dermatitis (SD) are common skin disorders affecting the scalp and extending to other body sites in the case of SD. They are associated with pruritus and scaling, causing an esthetical disturbance in the population affected.   Treatment of such conditions involves using a variety of drugs for long terms, thus optimizing drug formulation is essential to improve therapeutic efficacy and patient compliance. Conventional topical formulations like shampoos and creams have been widely used but their use is associated with disadvantages. To overcome such effects, novel topical nanotechnology-based formulations are currently under investigation. In the following article, we highlight recently published formulation approaches used to improve topical dandruff/SD therapy.

【 授权许可】

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