Physics-based simulation study of high-performance gallium arsenide phosphide–indium gallium arsenide tunnel field-effect transistor

Micro & nano letters

article

Bhagwan Ram Raad¹  Dheeraj Sharma¹  Kaushal Nigam¹  Pravin Kondekar¹ 

[1] Nanoscale Laboratory, Electronics and Communication Engineering Discipline, Indian Institute of Information Technology

关键词: gallium arsenide;    indium compounds;    III-V semiconductors;    tunnel transistors;    field effect transistors;    semiconductor device models;    physics-based simulation;    high-performance gallium arsenide phosphide–indium gallium arsenide tunnel field-effect transistor;    drain-channel material;    source material;    high-performance ultralow-power applications;    ON-state current;    ambipolar current;    OFF-state current;    threshold voltage;    subthreshold slope;    switching operation;    GaAsP−InGaAs;   

DOI  :  10.1049/mnl.2016.0050

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

Swallowing of foreign bodies is a fairly common pediatric emergency. Children usually swallow foreignobjects into their bodies accidentally during playing. Foreign body in the trachea is a common conditionwhich may be life threatening. Foreign body in bronchus is usually managed by bronchoscopy, thoughopen surgical procedure may be rarely needed and sometimes it is life threatening. We report a case ofa 5 year old male child who accidentally inhaled an open safety pin. Bronchoscopy was done to localizethe site of the foreign body, but it was not possible to be removed by bronchoscopy as the pin was open.Then, tracheotomy was done and foreign body was removed successfully. Tracheotomy stoma was closedafter the removal. Patient developed surgical emphysema within minutes of closure and presented withdifficulty in breathing with bradycardia, immediately surgeon explored the surgical site and reopen tracheostomysite and the patient was managed successfully.

【 授权许可】

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