期刊论文详细信息
Micro & nano letters
Threshold voltage study of scaled self-aligned In 0.53 Ga 0.47 As metal oxide semiconductor field effect transistor for different source/drain doping concentrations
article
A. Dehzangi1  M.F. Mohd Razip Wee1  N. Wichmann2  S. Bollaert2  M.R. Buyong1  B.Y. Majlis1 
[1] Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia;Institute of Electronics, University Lille 1
关键词: III-V semiconductors;    indium compounds;    gallium arsenide;    MOSFET;    doping profiles;    semiconductor doping;    aluminium compounds;    contact resistance;    electrical resistivity;    In0.53Ga0.47As-Al2O3;    sheet resistance;    subthreshold swing;    contact resistance;    Ion-Ioff ratio;    device parameters;    gate length;    air-bridge technology;    multigate n-type metal oxide semiconductor field effect transistor;    source-drain doping concentrations;    self-aligned metal oxide semiconductor field effect transistor;    threshold voltage;   
DOI  :  10.1049/mnl.2014.0007
学科分类:计算机科学(综合)
来源: Wiley
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【 摘 要 】

Effective communication, team working and human factors are given little attention in traditional medical curricula. However, these skills are fundamentally important during crisis resource management (CRM) in healthcare. These skills can be learnt and can be taught very effectively within a simulated environment. Thus simulation-based training on CRM can positively impact patient safety. One such course which focuses on the management of common neonatal emergencies is the ‘Neonatal Emergencies Simulation Team training’ (NEST) program. This one day multiprofessional educational program, originally designed by the London Neonatal Transfer Service, aims to develop multidisciplinary confidence and competence in the management of common neonatal emergencies. This program has been evaluated positively in India, Nepal, Saudi Arabia and the UK and shows promise for wider implementation in high-, middle- and lowincome countries. Here we give an overview of the program and its implications.

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CC BY|CC BY-ND|CC BY-NC|CC BY-NC-ND   

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