Spin Relaxation Time in InAlAs/AlGaAs Quantum Dots

Sensors & Transducers

M. A. Maaref¹  A. Melliti¹  N. Sellami¹  A. Lemaître²  R. Kuszelewiez² 

[1] Unite de Recherche de Physique des Semiconducteurs et Capteurs, Institut Préparatoire aux Etudes Scientifiques et Techniques, La Marsa 2070, Tunisia ;Laboratoire de Photonique et Nanostructures, CNRS, UPR 20, France;

关键词: Semiconductors;    Quantum dots;    Spin relaxation;    Photoluminescence;    Circular polarization.;   

DOI  :  

来源: DOAJ

【 摘 要 】

We report systematic temperature dependent measurements of spin relaxation time in self-assembled In0.72Al0.28As/Al0.28Ga0.72As quantum dots by continuous-wave photoluminescence. The degree of circular polarization decreases as a function of temperature. The spin relaxation time tS is deduced from the circular polarization degree using a three dimensional pseudo- spin precession model. The spin relaxation time decreases rapidly from few hundred picoseconds at 10 K to few tens picoseconds at 85 K. This large change of the spin relaxation time is explained in terms of acoustic phonon emission mechanism.

【 授权许可】

Unknown