Electronic and structural characterisation of Cu3BiS3 thin films for the absorber layer of sustainable photovoltaics

THIN SOLID FILMS

卷:562

Article

Yakushev, M. V.^1,2,3  Maiello, P.⁴  Raadik, T.⁶  Shaw, M. J.¹  Edwards, P. R.¹  Krustok, J.⁶  Mudryi, A. V.^1,5  Forbes, I.⁴  Martin, R. W.¹ 

[1] Univ Strathclyde, Dept Phys, SUPA, Glasgow G4 0NG, Lanark, Scotland

[2] URFU, Ekaterinburg 620002, Russia

[3] RAS, Ural Branch, Ekaterinburg 620002, Russia

[4] Northumbria Univ, Northumbria Photovolta Applicat Ctr, Newcastle Upon Tyne NE1 8ST, Tyne & Wear, England

[5] Natl Acad Sci Belarus, Sci Pract Mat Res Ctr, Minsk 220072, BELARUS

[6] Tallinn Univ Technol, EE-19086 Tallinn, Estonia

关键词: Thin films;    Solar cells;    Semiconductors;    Electronic structure;    Raman spectroscopy;    Photoreflectance;    Photoluminescence;   

DOI  :  10.1016/j.tsf.2014.04.057

来源: Elsevier

【 摘 要 】

Thin films of p-type Cu3BiS3 with an orthorhombic wittichenite structure, a semiconductor with high potential for thin film solar cell absorber layers, were synthesised by thermal annealing of Cu and Bi precursors, magnetron sputtered on Mo/glass substrate, with a layer of thermo-evaporated S. The elemental composition, structural and electronic properties are studied. The Raman spectrum shows four modes with the dominant peak at 292 cm(-1). Photoreflectance spectra demonstrate two band gaps E-gX and E-gY, associated with the X and Y valence sub-bands, and their evolution with temperature. Fitting the temperature dependencies of the band-gaps gives values of 1.24 and 1.53 eV for E-gX and E-gY at 0 K as well as the average phonon energy. Photoluminescence spectra at 5 K reveal two bright and broad emission bands at 0.84 and 0.99 eV, which quench with an activation energy of 40 meV. The photocurrent excitation measurements demonstrate a photoresponse and suggest a direct allowed nature of the band gap. (C) 2014 The Authors. Published by Elsevier B.V.

【 授权许可】

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