科技报告详细信息
| Electron Microscopy Studies of Potential 1-eV Bandgap Semiconductor Compounds ZnGeAs2 and Zn3As2 Grown by MOVPE: Preprint. | |
| Norman, A. G. | |
| Technical Information Center Oak Ridge Tennessee | |
| 关键词: Meetings; Electron microscopy; Solar cells; Semiconductors; Junction; | |
| RP-ID : DE200215000063 | |
| 学科分类：工程和技术（综合） | |
| 美国|英语 | |
| 来源: National Technical Reports Library | |
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【 摘 要 】
Presented at the 2001 NCPV Program Review Meeting: Electron microscopy studies of MOVPE layers of materials that are potential 1-eV bandgap semiconductors for solar cells.
【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| DE200215000063.pdf | 1390KB |  download |
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