Comparison of the Electrical Response of Cu and Ag Ion-Conducting SDC Memristors Over the Temperature Range 6 K to 300 K

Micromachines

Kristy A. Campbell¹  Kolton Drake¹  Tonglin Lu¹  Md. Kamrul H. Majumdar¹ 

[1] Department of Electrical and Computer Engineering, Boise State University, Boise, ID 83725-2075, USA;

关键词: chalcogenide;    electrochemical metallization cell;    electrochemical metallization (ecm);    ion conduction;    memristor;    self-directed channel (sdc);   

DOI  :  10.3390/mi10100663

来源: DOAJ

【 摘 要 】

Electrical performance of self-directed channel (SDC) ion-conducting memristors which use Ag and Cu as the mobile ion source are compared over the temperature range of 6 K to 300 K. The Cu-based SDC memristors operate at temperatures as low as 6 K, whereas Ag-based SDC memristors are damaged if operated below 125 K. It is also observed that Cu reversibly diffuses into the active Ge₂Se₃ layer during normal device shelf-life, thus changing the state of a Cu-based memristor over time. This was not observed for the Ag-based SDC devices. The response of each device type to sinusoidal excitation is provided and shows that the Cu-based devices exhibit hysteresis lobe collapse at lower frequencies than the Ag-based devices. In addition, the pulsed response of the device types is presented.

【 授权许可】

Unknown