Process study and the lithographic performance of commercially available silsesquioxane based electron sensitive resist Medusa 82

Micro and Nano Engineering

C. Kaiser¹  I. Raptis¹  M. Gerngroß²  G. Papageorgiou²  M. Schirmer²  T. Mai³  Th. Mpatzaka⁴  V. Vamvakas⁴  G. Zisis⁴ 

[1] Institute of Nanoscience and Nanotechnology, National Center for Scientific Research “Demokritos”, Athens, 15310, Greece;Allresist GmbH, Strausberg 15344, Germany;Institute of Nanoscience and Nanotechnology, National Center for Scientific Research “Demokritos”, Athens, 15310, Greece;ThetaMetrisis SA, Athens, 12132, Greece;

关键词: Electron beam lithography;    Silsesquioxane;    Negative tone electron-sensitive resists;    Resist processing;    Resist contrast;    Nanostructures;   

DOI  :  

来源: DOAJ

【 摘 要 】

In the past 2 decades silsesquioxane has gained attention in the Electron Beam Lithography community as a negative tone electron-sensitive resist (HSQ) whose advantages (sub-20 nm resolution, high contrast, low Line Edge Roughness, good shape fidelity and high etch resistance) outnumber its associated drawbacks (limited shelf-life, chemical instability issues, process residuals, low sensitivity, cost). The new silsesquioxane based resist, developed by Allresist GmbH, Medusa 82 (official product name: SX AR-N 8200) and Medusa 82 UV (SX AR-N 8250), its highly sensitive counterpart, have been designed to address all these issues. The objective of this work is to use fundamental Contrast Curve analysis, Dissolution Monitoring and parametric e-beam lithography experiments to study the influence of processing conditions (Post Exposure Bake Temperature, Development duration and developer strength) on the lithographic performance of sub-40 nm thick films.

【 授权许可】

Unknown