Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach

Nanoscale Research Letters

S. Kara¹  L. D’Ortenzi¹  S. J. Rezvani¹  R. Monsù¹  M. Fretto¹  E. Cara¹  L. Boarino¹ 

[1] Nanoscience and Materials Division, INRiM (Istituto Nazionale di Ricerca Metrologica);

关键词: Metal-assisted chemical etching;    Nanosphere lithography;    Silicon nanowires;    Electrical contacts;    Electron beam lithography;    Focused ion beam;   

DOI  :  10.1186/s11671-016-1689-x

来源: DOAJ

【 摘 要 】

Abstract Silicon nanowires fabricated by metal-assisted chemical etching can present low porosity and a rough surface depending on the doping level of the original silicon wafer. In this case, wiring of silicon nanowires may represent a challenging task. We investigated two different approaches to realize the electrical contacts in order to enable electrical measurement on a rough silicon nanowire device: we compared FIB-assisted platinum deposition for the fabrication of electrical contact with EBL technique.

【 授权许可】

Unknown