Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric

Electronics

Zhihua Dong¹  Hui Zhang¹  Peipei Zhang¹  Houqiang Fu²  Kai Fu³  Xuguang Deng⁴  Li Zhang⁴  Yaming Fan⁴  Guohao Yu⁴  Xing Wei⁵  Baoshun Zhang⁵  Yong Cai⁵  Xiaodong Zhang⁵ 

[1] College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China;Department of Electrical and Computer Engineering, Iowa State University, Ames, IA 50011, USA;Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005, USA;Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China;

关键词: AlGaN/GaN;    interface state;    MIS-HEMT;    SiN_x/SiON;    threshold voltage;   

DOI  :  10.3390/electronics11060895

来源: DOAJ

【 摘 要 】

This study has demonstrated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrates with a SiN_x/SiON composite gate dielectric. The threshold voltage shift in the devices was investigated. The MIS-HEMTs with the SiN_x/SiON composite gate dielectric exhibited superior threshold voltage uniformity and small threshold voltage hysteresis than the reference device with SiN_x only gate dielectric. The variation of the device threshold voltage was mainly related to trapping process by the interface states, as confirmed by band diagrams of MIS-HEMTs at different gate biases. Based on frequency-dependent capacitance measurements, interface state densities of the devices with the composite and single gate dielectrics were extracted, where the former showed much smaller interface state density. These results indicate that the SiN_x/SiON composite gate dielectric can effectively improve the device performance of GaN-based MIS-HEMTs and contribute to the development of high-performance GaN electronic devices.

【 授权许可】

Unknown