AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants

IEEE Journal of the Electron Devices Society

Huan-Chung Wang¹  Ting-En Hsieh¹  Shih-Chien Liu¹  Chia-Hsun Wu¹  Quang Ho Luc¹  Yueh-Chin Lin¹  Edward Yi Chang¹  Burhanuddin Yeop Majlis²  Chang Fu Dee² 

[1] Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan;Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, Bangi, Malaysia;

关键词: AlGaN/GaN;    MIS-HEMT;    Al₂O₃;    PEALD;    oxygen plasma;   

DOI  :  10.1109/JEDS.2017.2779172

来源: DOAJ

【 摘 要 】

We demonstrate the electrical performances of AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors (MIS-HEMTs) with high quality Al₂O₃ gate dielectric deposited by plasma enhanced atomic layer deposition using both H₂O and remote O₂ plasma as oxygen sources. Excellent gate-dielectric/GaN interface and Al₂O₃ film quality were obtained, resulting in a very small threshold voltage hysteresis and a low interface trap density. The MIS-HEMT device exhibited high on/off current ratio of ~1010, steep subthreshold slope, small gate leakage current, low dynamic on-resistance degradation, and effectively current collapse suppression. These results indicate that incorporating remote O₂ plasma in the ALD-Al₂O₃ deposition process is an effective and simple way to provide high quality gate dielectric for the GaN MIS-HEMTs production.

【 授权许可】

Unknown