Al2O3-Dielectric In0.18Al0.82N/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With Backside Substrate Metal-Trench Structure

IEEE Journal of the Electron Devices Society

Wei-Chou Hsu¹  Ching-Sung Lee²  Yu-Chang Chen²  Han-Yin Liu² 

[1] Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan;Department of Electronic Engineering, Feng Chia University, Taichung, Taiwan;

关键词: InAlN/AlN/GaN;    MOS-HFET;    Al₂O₃;    non-vacuum ultrasonic spray pyrolysis deposition;    backside metal-trench;   

DOI  :  10.1109/JEDS.2017.2769115

来源: DOAJ

【 摘 要 】

This paper investigates novel Al₂O₃-dielectric In_0.18Al_0.82N/AlN/GaN metal-oxidesemiconductor heterostructure field-effect transistors (MOS-HFETs) with backside metal-trench structure grown by using a non-vacuum ultrasonic spray pyrolysis deposition technique. 3-μm deep metal trenches coated with 150-nm thick Ni were formed on the backside of the Si substrate to improve the heat dissipation efficiency. The present In_0.18Al_0.82N/AlN/GaN MOS-HFET (Schottky-gate HFET) has demonstrated improved maximum drain-source current density (I_DS,max) of 1.08 (0.86) A/mm at VDS = 8 V, gate-voltage swing of 4 (2) V, on/off-current ratio (I_on/I_off) of 8.9 x 10⁸ (7.4 x 10⁴), subthreshold swing of 140 (244) mV/dec, two-terminal off-state gate-drain breakdown voltage (BVGD) of -191.1 (-173.8) V, turn-on voltage (Von) of 4.2 (1.2) V, and three-terminal on-state drain-source breakdown voltage (BVDS) of 155.9 (98.5) V. Enhanced power performances, including saturated output power (P_out) of 27.9 (21.5) dBm, power gain (G_a) of 20.3 (15.5) dB, and power-added efficiency (PAE) of 44.3% (34.8%), are achieved.

【 授权许可】

Unknown