Improved Ultraviolet Detection and Device Performance of Al2O3-Dielectric In0.17Al0.83N/AlN/GaN MOS-HFETs

IEEE Journal of the Electron Devices Society

Yi-Ping Huang¹  Wei-Chou Hsu¹  Ching-Sung Lee²  Xue-Cheng Yao² 

[1] Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan;Department of Electronic Engineering, Feng Chia University, Taichung, Taiwan;

关键词: MOS-HFET;    InAlN/AlN/GaN;    Al₂O₃;    ultrasonic spray pyrolysis deposition;    UV detection;    spectral responsivity;   

DOI  :  10.1109/JEDS.2019.2906354

来源: DOAJ

【 摘 要 】

Ultraviolet (UV) detection and electrical characteristics of In_0.17Al_0.83N/AlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with Al₂O₃ gate-dielectric and passivation formed by using ultrasonic spray pyrolysis deposition (USPD) are studied with respect to a conventional Schottky-gate HFET. The present MOS-HFET (Schottky-gate HFET) has demonstrated superior spectral responsivity (SR) of 360 (340) A/W at 350 nm at V_GS = 5(3) V and V_DS = 6(7) V, maximum drain-source saturation current density (I_DS,max) of 810.5 (546.6) mA/mm, maximum extrinsic transconductance of (gm,max) of 180.4 (221.2) mS/mm, gate-voltage swing (GVS) of 2.4 (0.5) V, on/off current ratio (I_on/I_off) of 5.5 x 108 (1.7 x 105), two-terminal off-state gate-drain breakdown voltage (BVGD) of -158.5 (-127) V, three-terminal drain-source breakdown voltage (BVDS) of 162 (83.4) V at V_GS = -10 V, and power-added efficiency (P.A.E.) of 26.3% (16.5%) at 2.4 GHz at 300 K. In addition to the improved device performance, this paper demonstrates, for the first time, the UV sensing based on an InAlN/AlN/GaN MOS-HFET design.

【 授权许可】

Unknown