Design optimisation of AlGaN/GaN metal insulator semiconductor high electron mobility transistor with high-K/low-K compound gate dielectric layer for millimeter-wave application

Micro & nano letters

article

Jiangfeng Du¹  Zehong Hou¹  Peilin Pan¹  Zhiyuan Bai¹  Qi Yu¹ 

[1] State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China

关键词: optimisation;    high electron mobility transistors;    MIS devices;    permittivity;    aluminium compounds;    gallium compounds;    III-V semiconductors;    wide band gap semiconductors;    design optimisation;    MIS-HEMT;    gate dielectric layer;    millimeter wave application;    radiofrequency characteristics;    dielectric constant;    electric field discontinuity;    CGD structure;    DC transconductance;    maximum saturation current;    cutoff frequency;    maximum oscillation frequency;    AlGaN-GaN;   

DOI  :  10.1049/mnl.2016.0370

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

Traumatic airway injuries may be rare, but these can be difficult to manage as there is a chanceof aspiration of blood and risk of hypoxia as happened in our case. We present a case of suicidalcut throat injury in a 16 year old male. Tracheal intubation was initially done directly throughthe tracheal cut; and tracheostomy with repair of wound followed later on. The patient waselectively ventilated for 12 hours post operatively and recovered completely. Mortality and latecomplications in these patients are high and may be related to delay in definitive treatment.

【 授权许可】

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