Investigation of Electrical Properties of the Al/SiO2/n++-Si Resistive Switching Structures by Means of Static, Admittance, and Impedance Spectroscopy Measurements

Materials

Bartłomiej Stonio¹  Piotr Wiśniewski¹  Bogdan Majkusiak²  Andrzej Mazurak²  Jakub Jasiński² 

[1] Centre for Advanced Materials and Technologies CEZAMAT, Warsaw University of Technology, 02-822 Warsaw, Poland;Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 00-662 Warsaw, Poland;

关键词: resistive switching;    RRAM;    memristor;    silicon oxide;    MIS structure;    small-signal measurements;   

DOI  :  10.3390/ma14206042

来源: DOAJ

【 摘 要 】

In this study, the resistive switching phenomenon in Al/SiO2/n⁺⁺-Si structures is observed and studied by means of DC, small-signal admittance, and complex impedance spectroscopy measurements. Possible transport mechanisms in the high and low resistance states are identified. Based on the results of the applied measurement techniques, an electrical equivalent circuit of the structure is proposed. We discuss the effect of parasitic elements influencing the measurement results and show that a proper model can give useful information about the electrical properties of the device. A good agreement between the characteristics of the proposed equivalent circuit and the experimental data, based on different measurement procedures, confirms the validity of the used methodology and its applicability to the electrical characterization of RRAMs.

【 授权许可】

Unknown