Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments

Materials

Shou-Jen Huang¹  Kai-Huang Chen¹  Chien-Min Cheng²  Kuan-Chang Chang³  Tsung-Ming Tsai³  Shu-Ping Liang⁴  Tai-Fa Young⁴ 

[1] Department of Electrical Engineering and Computer Science, Tung Fang Design University, Kaohsiung 829, Taiwan;Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 710, Taiwan;Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 829, Taiwan;Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung 829, Taiwan;

关键词: nonvolatile memory;    gadolinium;    RRAM;    resistive switching;    silicon oxide;   

DOI  :  10.3390/ma11010043

来源: DOAJ

【 摘 要 】

In this study, the hopping conduction distance and bipolar switching properties of the Gd:SiOx thin film by (radio frequency, rf) rf sputtering technology for applications in RRAM devices were calculated and investigated. To discuss and verify the electrical switching mechanism in various different constant compliance currents, the typical current versus applied voltage (I-V) characteristics of gadolinium oxide RRAM devices was transferred and fitted. Finally, the transmission electrons’ switching behavior between the TiN bottom electrode and Pt top electrode in the initial metallic filament forming process of the gadolinium oxide thin film RRAM devices for low resistance state (LRS)/high resistance state (HRS) was described and explained in a simulated physical diagram model.

【 授权许可】

Unknown