Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy

Materials Research Letters

Andrei Gloskovskii¹  Eduardo Perez²  Markus Andreas Schubert²  Thomas Schroeder²  Christian Wenger²  Florian Bärwolf²  Pauline Calka²  Karol Fröhlich³  Sankaramangalam Ulhas Sharath⁴  Stefan Petzold⁴  Jinfeng Kang⁵  Lambert Alff⁵  Peng Huang⁵  Yudi Zhao⁵  Gang Niu⁶  Wei Ren⁶  Zuo-Guang Ye⁷ 

[1] Deutsches Elektronen-Synchrotron DESY;IHP, Im Technologiepark 25;Institute of Electrical Engineering, Slovak Academy of Sciences;Institute of Materials Science, Technische Universität Darmstadt;Institute of Microelectronics, Peking University;School of Electronic and Information Engineering, Xi’an Jiaotong University;Simon Fraser University;

关键词: HAXPES;    resistive switching;    interface;    RRAM;    HfO2;   

DOI  :  10.1080/21663831.2018.1561535

来源: DOAJ

【 摘 要 】

The HfO2-based resistive random access memory (RRAM) is one of the most promising candidates for non-volatile memory applications. The detection and examination of the dynamic behavior of oxygen ions/vacancies are crucial to deeply understand the microscopic physical nature of the resistive switching (RS) behavior. By using synchrotron radiation based, non-destructive and bulk-sensitive hard X-ray photoelectron spectroscopy (HAXPES), we demonstrate an operando diagnostic detection of the oxygen ‘breathing’ behavior at the oxide/metal interface, namely, oxygen migration between HfO2 and TiN during different RS periods. The results highlight the significance of oxide/metal interfaces in RRAM, even in filament-type devices.

【 授权许可】

Unknown