Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications †

Sensors

Ming Tang¹  Kuan-Ting Chen²  Pin-Guang Chen²  Yu-Chen Chou²  Min-Hung Lee²  Zheng-Ying Wang² 

[1] Device Design Division, PTEK Technology Co., Ltd., Hsinchu 30059, Taiwan;Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan;

关键词: InAlN;    swing;    wafer-scale;    high-electron-mobility transistor (HEMT);   

DOI  :  10.3390/s18092795

来源: DOAJ

【 摘 要 】

InAlN/Al/GaN high electron mobility transistors (HEMTs) directly on Si with dynamic threshold voltage for steep subthreshold slope (<60 mV/dec) are demonstrated in this study, and attributed to displacement charge transition effects. The material analysis with High-Resolution X-ray Diffraction (HR-XRD) and the relaxation by reciprocal space mapping (RSM) are performed to confirm indium barrier composition and epitaxy quality. The proposed InAlN barrier HEMTs exhibits high ON/OFF ratio with seven magnitudes and a steep threshold swing (SS) is also obtained with SS = 99 mV/dec for forward sweep and SS = 28 mV/dec for reverse sweep. For GaN-based HEMT directly on Si, this study displays outstanding performance with high ON/OFF ratio and SS < 60 mV/dec behaviors.

【 授权许可】

Unknown