Comparing distortion and power characteristics of AlGaN/GaN HEMTs between SiC and GaN substrates

IEICE Electronics Express

article

Atsushi Moriwaki¹  Shinji Hara¹ 

[1] Institute of Materials and Systems for Sustainability, NAGOYA University

关键词: AlGaN/GaN;    high-electron-mobility transistor (HEMT);    freestanding GaN substrate;    SiC substrate;    current collapse;    intermodulation distortion;   

DOI  :  10.1587/elex.18.20210486

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

In this paper, we compare the distortion and power characteristics between AlGaN/GaN high-electron-mobility transistors (HEMTs) with different epi-structures. Third-order intermodulation distortion (IM3) measurement evaluates distortion characteristics, and on-wafer load and source-pull measurements evaluate the power performance. The results show that the AlGaN/GaN HEMTs directly fabricated on GaN substrates without nucleation layer perform better than those fabricated on SiC substrates. Furthermore, the distortion performance is compared with and without field plate.

【 授权许可】

CC BY