In Situ Growth of PbS/PbI2 Heterojunction and Its Photoelectric Properties

Nanomaterials

Huan Liu¹  Yingxiu Kong¹  Jun Han¹  Jin Zhang¹  Shangxun Yang² 

[1] School of Optoelectronic Engineering, Xi’an Technological University, Xi’an 710032, China;School of Weapons Science and Technology, Xi’an Technological University, Xi’an 710032, China;

关键词: in situ growth;    heterojunction;    photoresponse;    specific detectivity;    wide-spectrum detector;   

DOI  :  10.3390/nano12040681

来源: DOAJ

【 摘 要 】

In this paper, PbI₂ thin films with a uniform surface morphology and compact structure were prepared by adjusting the spin coating process parameters. On such a basis, the PbS/PbI₂ heterojunction was fabricated on the PbI₂ surface by the method of in situ chemical replacement growth. The results show that the PbS/PbI₂ heterojunction grown by this method has a clear interface and is closely combined. The introduction of a PbS layer enables its spectral response range to cover the visible and near-infrared regions. Compared with the PbI₂ thin film device, its responsivity is increased by three orders of magnitude, its response time reduced by 42%, and its recovery time decreased by nearly 1/2 under 450 nm illumination. In the case that there is no response for the PbI₂ thin film device under 980 nm illumination, the specific detectivity of the PbS/PbI₂ heterojunction device still amounts to 1.8 × 10⁸ Jones. This indicates that the in situ chemical replacement is a technique that can construct a high-quality heterojunction in a simple process. PbS/PbI₂ heterojunction fabricated by this method has a visible–near-infrared light detection response range, which provides a new idea for creating visible–near-infrared common-path detection systems.

【 授权许可】

Unknown