Highly Sensitive, Ultrafast, and Broadband Photo‐Detecting Field‐Effect Transistor with Transition‐Metal Dichalcogenide van der Waals Heterostructures of MoTe2 and PdSe2

Advanced Science

Byoungchoo Park¹  Amir Muhammad Afzal¹  Muhammad Zahir Iqbal²  Aqrab ul Ahmad³  Ghulam Dastgeer⁴ 

[1] Department of Electrical and Biological Physics, Kwangwoon University, Wolgye‐Dong, Seoul, 01897, South Korea;Nanotechnology Research Laboratory, Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi, Khyber Pakhtunkhwa, 23640, Pakistan;School of Physics and School of Microelectronics, Dalian University of Technology, Dalian, 116000, China;School of Physics, Peking University, Beijing, 100871, China;IBS Center for Integrated Nanostructure Physics, Sungkyunkwan University, Suwon, 16419, South Korea;

关键词: charge‐transfer transition;    field‐effect transistors;    photoresponsivity;    specific detectivity;    transition‐metal dichalcogenides;   

DOI  :  10.1002/advs.202003713

来源: Wiley

【 授权许可】

CC BY