Nickel Film Deposition with Varying RF Power for the Reduction of Contact Resistance in NiSi

Coatings

Hyeong-Sub Song¹  Sunil Babu Eadi¹  Hyun-Dong Song¹  Hi-Deok Lee¹  Jungwoo Oh² 

[1] Department of Electronics Engineering, Chungnam National University, Daejeon 34134, Korea;School of Integrated Technology, Yonsei Institute of Convergence Technology, Yonsei University, Incheon 21983, Korea;

关键词: deposition rate;    contact resistance;    nickel silicide;    radio frequency;   

DOI  :  10.3390/coatings9060349

来源: DOAJ

【 摘 要 】

In this study, the effect of radio frequency (RF) power on nickel (Ni) film deposition was studied to investigate the applications of lowering the contact resistance in the NiSi/Si junction. The RF powers of 100, 150, and 200 W were used for the deposition of the Ni film on an n/p silicon substrate. RMS roughnesses of 1.354, 1.174 and 1.338 nm were obtained at 100, 150, and 200 W, respectively. A circular transmission line model (CTLM) pattern was used to obtain the contact resistance for three different RF-power-deposited films. The lowest contact resistivity of 5.84 × 10⁻⁵ Ω-cm² was obtained for the NiSi/n-Si substrate for Ni film deposited at 150 W RF power.

【 授权许可】

Unknown