| NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 卷:241 |
| Applications of synchrotron X-rays in microelectronics industry research | |
| Article; Proceedings Paper | |
| Jordan-Sweet, JL ; Detavernier, C ; Lavoie, C ; Mooney, PM ; Toney, MF | |
| 关键词: microelectronics materials; X-ray diffraction; synchrotron; nickel silicide; strained silicon; nanoparticles; | |
| DOI : 10.1016/j.nimb.2005.07.031 | |
| 来源: Elsevier | |
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【 摘 要 】
The high flux and density of X-rays produced at synchrotrons provide the microelectronics industry with a powerful probe of the structure and behavior of a wide array of solid materials that are being developed for use in devices of the future. They also are of great use in determining why currently-used materials and processes sometimes fail. This paper describes the X20 X-ray beamline facility operated by IBM at the National Synchrotron Light Source, and presents a series of three industry challenges and results that illustrate the variety of techniques used and problems addressed. The value of this research ranges from solving short-term, technically specific problems to increasing our academic understanding of materials in general. Techniques discussed include high-resolution diffraction, time-resolved diffraction, texture measurements, and grazing-incidence diffraction. (c) 2005 Elsevier B.V. All rights reserved.
【 授权许可】
Free
【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| 10_1016_j_nimb_2005_07_031.pdf | 330KB |
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