Characterization of electroless nickel as a seed layer for silicon solar cell metallization

Bulletin of materials science

Mehul C Raval¹  Chetan S Solanki¹ 

[1] National Center for Photovoltaic Research and Education (NCPRE), Indian Institute of Technology-Bombay, Powai, Mumbai 400 076, India$$Department of Energy Science and Engineering, Indian Institute of Technology-Bombay, Powai, Mumbai 400 076, India$$National Center for Photovoltaic Research and Education (NCPRE), Indian Institute of Technology-Bombay, Powai, Mumbai 400 076, IndiaNational Center for Photovoltaic Research and Education (NCPRE), Indian Institute of Technology-Bombay, Powai, Mumbai 400 076, India$$Department of Energy Science and Engineering, Indian Institute of Technology-Bombay, Powai, Mumbai 400 076, India$$Department of Energy Science and Engineering, Indian Institute of Technology-Bombay, Powai, Mumbai 400 076, IndiaNational Center for Photovoltaic Research and Education (NCPRE), Indian Institute of Technology-Bombay, Powai, Mumbai 400 076, India$$Department of Energy Science and Engineering, Indian Institute of Technology-Bombay, Powai, Mumbai 400 076, India$$

关键词: Niâ€�?�Cu metallization;    electroless nickel;    contact resistivity;    nickel silicide;    nickel phosphides.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Electroless nickel plating is a suitable method for seed layer deposition in Niâ€�?�Cu-based solar cell metallization. Nickel silicide formation and hence contact resistivity of the interface is largely influenced by the plating process and annealing conditions. In the present work, a thin seed layer is deposited from neutral pH and alkaline electroless nickel baths which are annealed in the range of 400â€�??420°C for silicide morphology and contact resistivity studies. A minimum contact resistivity of 7 mð›�? cm² is obtained for seed layer deposited from alkaline bath. Silicide formation for Pd-activated samples leads to uniform surface morphology as compared with unactivated samples due to non-homogeneous migration of nickel atoms at the interface. Formation of nickel phosphides during annealing and the presence of SiO₂ at Niâ€�?�Si interface creates isolated Ni₂Siâ€�?�Si interface with limited supply of silicon. Such an interface leads to the formation of high resistivity metal-rich Ni₃Si silicide phase which limits the reduction in contact resistivity.

【 授权许可】

Unknown